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Research On Anisotropic Etching Processing Technique With Wet Method On Silicon Devices

Posted on:2010-11-05Degree:MasterType:Thesis
Country:ChinaCandidate:S S WanFull Text:PDF
GTID:2178360275999190Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Because of its anisotropic etching in some high-pH etchants(EPW, KOH, NH4OH, TMAH), single crystal silicon has found a wide application range including microelectroics, microoptics and micromechanical systems. In micromechanical systems, the KOH process is used because of its repeatability and uniformity in fabrication while maintaining a low production cost. So it is one of the most commonly used alkaline solution in anisotropic etching.This paper summarizes all kings of models about silicon anisotropic etching, and puts forward some sifnificative notions for the development of models. simultaneously, it is researched KOH anisotropic on wet silicon for backside thinning in the experiment. And using mechanical grinding on the back of silicon for thinning, and then contrasted the results of two experiments and analyzed the reason that which cause the face phenomenon.
Keywords/Search Tags:KOH, Silicon, Anisotropic etching, Backside thinning
PDF Full Text Request
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