| The junction barrier controlled Schottky(JBS) rectifier is a novel concept for the suppression of leakage current in Schottky barrier rectifier. JBS have many excellent performances: such as high-current, big resist pressure, high switching speed and good capability in resisting surge current, comparing with Schottky rectifier and p-n junction barrier.The mainly work in the present thesis is design a series of JBS rectifier having the performance index of forward current 5-10A and reverse breakdown voltage 200V,300V and 400V.Based on the operational mechanism of JBS, the main material parameters and constructional parameters are decided.For the purpose of high resist pressure, a couple of floating field limiting ring structure is adopted. After theory analyse of space between rings, we obtained comparatively optimal spacing and the maximum breakdown voltag useing ISE simulation software. A layout of 5A/200V JBS rectifier is designed. |
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