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Studies On Fabrication And Photoelectric Properties Of ZnO-Based Ultraviolet Material

Posted on:2010-05-24Degree:MasterType:Thesis
Country:ChinaCandidate:X Y YangFull Text:PDF
GTID:2178360275499192Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In recent years,the ZnO based semiconductor materials have been focused as the promising candidates in the application for ultraviolet optoelectronic devices.In order to obtain high performance light emitting devices,we need to prepare high quality ZnO film.In this work,through adjusting the Ar to O2 rate,the substrate and the annealing temperature,we find the optimal technological parameters are:voltage,400V;current, 450mA;working pressure,2.0Pa;substrate temperature,250℃;annealing temperature,900℃by employing the dc reactive magnetron sputtering method..Then we probe the structure and the surface appearance of the samples by using the scanning electron microscope(SEM) and the X-ray diffraction method(XRD).The photoluminescence and the resistance of the samples are measured and analyzed through the fluorescence spectrometer and the four point probe,we prepare the ZnO film on the Si substrate.Then,we prepare the ZnO film on the Si substrate with the lithography technology.The ZnO films we obtained with the previous methods take on the following merits:the film particles are large,and the films are more compact and neat;the crystallization quality in the C axis direction is improved;the intense of the ultraviolet peak is high,while the visible light is weak.These implicate that the intrinsic defects decrease,which is of certain significance in the preparation of the ultraviolet laser devices.
Keywords/Search Tags:ZnO, dc reactive magnetron sputtering method, X-ray diffraction, scanning electron microscope, photoluminescence, conductivity
PDF Full Text Request
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