The Research On High Frequency Resonant Gate Drive Circuits

At higher switching frequency, and either low voltage or high current applications, the gate drive loss of the power MOSFET becomes quite significant. In order to overcome the shortcomings of conventional gate driver, resonant gate driver circuits have been proposed. The basic idea is to utilize the L-C resonance to recovery the energy stored in the MOSFET gate capacitance effectively. In this dissertation, conventional gate driver and the operation principle of resonant gate driver is discussed firstly, and then, several reaonant gate dirvers for one-switch and two-switch are discussed.This paper will discuss new proposed gate-drivers. A new sinusoidal resonant gate drive circuit based on class E amplifier is proposed. The major benefit of the sinusoidal driver is that it only needs one dirve switch. A new dual channel pulse resonant gate driver is proposed. By adjusting the phase shift angle between the driving switches, an initialized current can be generated to provide fast gate drive speed. Based on topologies optimization, two new resonant gate drivers for synchronous Buck converter are proposed. The former driver has simple structure and can be drived neatly. The latter one is a low voltage driver; it makes ues of the coupled inductor to turn on the high side switch without level shifter circuit.Theoretical analysis, Simulation and experimental results are provided to verify the proposed drive circuits.