Theoretical And Experimental Research On GaAs/Si Heteroepitaxial And Boron-Incorporated Photoelectronic Materials

The research work of this thesis was mainly supported by the sub-project one "Theory on heterogeneous materials compatibility and Key Structure & Technology Innovations for Monolithic Integrated Optoelectronic Devices" (Project No.2003CB3149001) of the major project "Basic Research on Integrated Optoelectronic Devices and Microstructure Optical Fibers with Structure and Technology Innovations for Future Advanced Optical Communications", which is the State Key Development Program for National Basic Research Program of China (Project No.2003CB314900).At present, with the rapid development of information technologies, optical communication technologies, which is the "nerve" of information society, have been more and more important. The focus of the current research works is on WDM and All-Optical Network, which is wish to combine High-speed optical properties with Mature electrical characteristics, therefore , how to integrate Heterojunction semiconductor materials with different Photoelectron characteristics, especially through integrate III/V semiconductor materials represented by GaAs and InP with Si by the method of large mismatch heteroepitaxy, have become the most significant research.This thesis did research on the strain and stress distribution of substrate and epitaxial layer in large mismatch heteroepitaxy, and several beneficial experiments was carried out. The main work is listed as follows:1. Established the strain and stress distribution models of lattice mismatch and thermal mismatch in large mismatch heterostructure, deduced the distribution formula of the strain and stress, which had been used to GaAs/Si heteroepitaxial. The result indicated that the stress of the GaAs Epitaxial layer decreases with the accretion of lattice relaxation (R), and increases when the reaction temperature rising.2. The GaAs epilayers had been successfully grown on Si substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) based on Low-temperature buffer two-step method, and GaAs epilayers oriented (OOl)Si and (100)Si 4°slanting to(110) substrates had been compared. The experimental results indicate that substrate with angle has a bigger lattice relaxation, which effectively inhibits the reversed phase disorder, and reduces the formation of Type II dislocation, which has profound significance in improving GaAs epitaxiallayer's crystal quality.3. Experiment on BGaAs/GaAs heteroepitaxy based on buffer layer was achieved by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The experimental results indicate that incorporation of boron atoms is affected by temperature and Moor flow of boron, and it can not be increased optionally.4. Experiment on BInGaAs/GaAs heteroepitaxy based on buffer layer was achieved by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The experimental results indicate that incorporation of boron atoms lead to the decrease of crystal lattice, and incorporation of indium atoms lead to the increase of crystal lattice. Adjusting the composition of boron and indium in BInGaAs can offset their impact on the lattice. Low temperature (11K) photoluminescence (PL) wavelength of lattice-matched BInGaAs with the boron composition of about 4.7% is extended to 1.24μm.