Electrical Characterization Measurement Of SiC With High Temperature

At present, the mainly semiconductor materials are Si and GaAs. As they have some performance deficiencies under high-temperature conditions, it makes SiC be the representative of the third era of semiconductor materials, and have a wide range of concerns. Higher breakdown voltage and thermal conductivity of SiC make power rate of devices improved greatly, so it has broad prospect in the field of high-temperature of high-power. To obtain the relations between electrical parameters of semi-insulating SiC monocrystal and temperature, Van der Pauw construction is used to make Hall measurement of semi-insulating SiC monocrystal adulterated with high temperature .The result shows that mobility and free carrier concentration increase with the temperature rising gradually from 300K, when the temperature be 575K and 650K, the SiC material appears acceptor impurity compensation, the measured curve fluctuates accordingly, the mobility decreases with compensation degree rising, and the resistivity decreases with temperature rising, then the semi-insulating SiC material does not meet to requirement of insulating substrate of high temperature device after 500K.