Analysis And Experimentation Of The Films In Ultra-high Density Near-field Optical Storage

With the rapid development of network and digital technology, the informationtechnique has become one key point. Under this situation, optical data storage techniques areplaying a more and more important role in modern information society. The present state anddevelopment of the field of the optical storage are introduced, and the development trend ofultra-high density optical storage is prospected. In the paper, new optical storage system withhigher storage density and capacity is urgently required. Near-field optical storage has such agreat potential and prospect in high density data storage that great attention has been paid tothe near-field storage around the world.In this paper, the principle of near-field optical storage is described in detail. Severalsystems of near-field optical storage are summarized, and their advantages and problems areanalyzed. Base on the content of the fund of high density near-field storage, a system isproposed in which PD, VCSEL and Tip are integrated and installed on AFM cantilever tomake the system simplified. Ultimately, high density and high data transfer rate are expectedto be realized with VCSEL arrays as laser source.Under current experiment condition, early researches on near-field optical storage arecompeted and introduced in the paper. The researches have been done include: essentialparameters of VCSEL are tested, the topography and optical characteristics of the Ge-Sb-Tefilm and GaAs micro-tip are investigated, and theoretic calculations of the heat effect on thesurface of Ge-Sb-Te film when it is irradiated with different method are discussed. Schemesof subsection of this near-field optical storage are designed, and also succeed in writinginformation on Ge-Sb-Te film by VCSEL in experiments. At the end, the difficulties arepointed out and later work to be done is prospected.