The Synthesis And Properties Of Aligned ZnO Nanowire Arrays

Well-aligned ZnO nanowire arrays were synthesized by using of chemical vapor deposition (CVD) method. Some kinds of unfamiliar ZnO nanowire microstructures were synthesized. The microstructures, physical properties, and growth mechanism of these ZnO nanowire arrays were studied. The results were listed as follows:1. Aligned ZnO nanowire arrays have been successfully synthesized via the CVD method with a mixture of ZnO and active carbon powders as reactants. The influence of the different experiment parameters was discussed in details. The results revealed that the microstructures of the synthesized ZnO nanowires were related with the temperature and gas flux. The as-synthesized nanowires showed straight and well oriented growth tendency alone the (0002) plane at 1000~1100℃condition. When some quantities of Zn powders were mixed into the reactants, some kinds of unfamiliar ZnO micro/nano tubes and nanonails arrays were formed. The experimental results could be very useful for photo-electron and other nanoelectronics device applications.2. With the VLS growth mechanism, the different morphologies was discussed in details, especially the experimental parameters effecting on the synthesis of ZnO micro/nanowires. It revealed that the microstructures of ZnO nanowires array were dominated not only by the VLS growth processes, but also by the Zn growth nucleation and Ehrlich-Schwoebel barrier of the ZnO nanowire surface.3. The different synthesized samples were characterized by XRD, SEM and PL spectrum analytic technology. And corresponding results revealed the all the ZnO nano-scale products have perfect single-crystal structure. Compared ZnO nanorod array with the pyramid ZnO nanowires array, the latter presented higher ultraviolet peak intensity and given a broader green peak. By using the BET analytic method, the specific surface area of ZnO nanotubes was tested. The specific surface area of ZnO nanotubes was more than 100.78m~2/g, it is larger than the value of the ZnO powder (46.318m~2/g). So the prepared nanotubes would be advantageous in potential application of the optic-catalyst, solar cell, and other fields.4. Assisted with the high-resolution optical microscopy, a single nanonail MOSFET was fabricated via the atom force microcopy (AFM) and electrostatic probe assembling method. The nanonail MOSFET apparently exhibited IV rectifying behavior (forward-biased voltage Vb=0) and displayed an n-typical MOSFET behavior (Vb=1.5). Therefore, this type of nanonail MOSFET would be a better candidate for the electron switch and amplifier, it also proposed a practical application in the area of the nano devices.