The Influence Of Hydrostatic Pressure On Resonent Tunneling For â…¢-â…¤ Group Quantum Wells

In recent year, the research of the hydrostatic pressure which effect on properties of semiconductor materials and correlated low dimensional systems (for instance quantum dot, quantum well and super lattices) are widely interested.The semiconductor band structure, lattice vibrations and relative physical problem have been studied both theoretical and experimental physicists. But, the further investigation of the resonant tunneling of semicondu- ctor heterojunction which is effected by the hydrostatic pressure need to be done.Connecting the development of home and aboard, the paper have done particular theory research and analytical calculation on quantum well of the III-V semiconductor materials affected by hydrostatic pressure and I-V characteristics basing on semiconductor heterojuction materials and energy-band structure.First,the author have computed the one dimensional schordinger's wave equation with transfer matrix precisely and have gotten transmission coefficient.At the same time, the paper go further research on the relationship between the transmission coefficient, effective mass values and barrier parameter. It is proved that the effective mass values and barrier parameter have great influence on transmission coefficient.Second, according to meso-piezoresistance, all sorts of parameters which effect transmission coefficient and tunneling current under the condition of hydrostatic pressure are analysed. These parameters include lattice constant, dielectric constant, effective mass values and so on. It is theory foundation for further research in the paper.At last, it is studied that the transmission coefficient and I-V characteristic on the different condition of hydrostatic pressure are changed on two systems of III-V rsonent quantum well which are AlxGa1-xAs/GaAs system and AlxGa1-xN/GaN system. Moreover, the variations of tunneling current density and PVR on different hydrostatic pressure are emulated. Also, the article gets quasi-binding energy levels.In brief, the paper investigates transmission coefficient and I-V characteristic of the structure of quantum well film which is composed of different semiconductor materials and the influence of semiconductor materials. Meanwhile, the author study the variation about I-V characteristic curve of quantum well which is composed of the construction of superlattice film materials. The article gets the relationship that the emulation curve is changed by the parameters of quantum well and mechanics signals. It is theory foundation for the performance influence of semiconductor devices on variable condition.