Modeling Of The Nonlinear Device

In accent years, GaN HEMT/SiC MESFETs is a new generation of wide-gap semiconductor device. The theory of testing and modeling can help to study this kind of device, reduce the cost of research, speed up the progress and increase the efficiency.According to the shortcoming of studying method, it is made use of that the method of equivalent-circuit model. Based on the principle of the charge carrier transporting inside the device. It is expressed that the more complicated and important fitting parameters and analyze the physical meaning using the exact mathematic relation. Now some new model is developed about GaN HEMT and SiC MESFET. The software can simulated and get the result of model parameter in the base of the testing data and optimizational function.It is tested that the high voltage I-V character by a advanced apparatus and analyze the result of testing. Thus more accurate data can be gotten.The simulating results of Modeling and ADS software agree with each other. Now the nonlinear model have been applied to design the circuit. But the model have some faults. So the model must be advanced in order to adapt to design circuit.