Study On The Large-signal Modeling Of GaAs RF Power MESFET

Gallium Arsenic(GaAs) is one of important semiconductor materials that is widly used in RF(radio freguency)/microwave applications.It has wide bandgap, high electron mobility and so on.Therefore the high-power microwave devices-- Metal Semiconductor Field Effect Transistors (MESFETs) based on GaAs material have received increased attention. The large signal analysis is an attractive topic because it is an important and tough issue. In this paper, the study the RF large-signal characteristic of GaAs MESFETs is presented.First of all, I establish the small-model of GaAs MESFET, then extract the parameters of the model. based on the small-model analysis.Secondly the large-signal-equivalence-circuit model is established, the nonlinear model and the extraction of the parameters of the model are introduced. Then the large-signal physical model is presented. It's simulation results well agree with the experimental data. Finally the find-insert method is presented, which can be used in large signal simulation..This paper not only can instruct the design of amplifier of GaAs MESFET, but also provides the base for the further large-signal model study for GaAs MESFET.