Research On Insulated Gate Bipolar Transistor's Application In High Power Solid State Modulator

In this dissertation, the character of insulated grid bipolar transistor (IGBT) and itsapplication in high power solid state modulator are studied.IGBTs of different packages and manufacturing technologies are compared based onanalysis,experiment and simulation. Non punch through (NPT) type discrete IGBTchip is adopted as high voltage pulse switch in modulator. Based on analyticalequations describing semiconductor physical process, IGBT's operation mechanism ispresented. For selected IGBT product, its physics-based model is built with MASTlanguage.Feasibilities of main solid state modulator topology configurations are analyzed and thehighly efficient one is selected for modulator proposal at the Institute of Electronics,Chinese Academy of Sciences. IGBT switch module with related driver and the controlcircuits are designed and produced to meet modulator's strict requirements on pulsedvoltage waveform and fast arc protection. This solid state modulator has successfullydemonstrated its application in klystron test.To analyze the switching transient process, IGBT module and modulator are modeled using SABER software. Effects of voltage balance network, stray capacitances anddiscrete distribution of device value on pulsed voltage are simulated. IGBT's powerloss in switching process is calculated with two methods. IGBT's fail in short circuitsituation is also modeled and some measures are suggested to improve the performance.Based on above work, design and modeling method of solid state modulator with IGBTswitch is presented. Results of simulation and experiment consist with each other well.