No-Uniform Braod Area Semiconductor Lasers

With the development of diode pumping solid state laser(DPSSL) technology, higher output power for diode lasers have to been required while high beam quality is important for most advanced applications. For high power diode lasers the broad area (BA) stripe device has become the most used structure. The beam quality of BA diode lasers has a large difference compared with that of an ideal Gaussian beam due to the carrier space burning hole, self-focus, hot lensing and lateral mode competition etc. in BA devices because no suitable lateral waveguide exist in this type devices. The M~2 factor of BA diode lasers is far more greater than 1.0 when characterized the beam quality with M factor and can't satisfy most advanced application in future. Two lateral confinement structures have been proposed based on carrier diffusion mechanics, a small M~2 factor and then a high beam quality can be achieved by optimizing the internal factors which affect the beam quality.Theoretical analysis and experiment results indicate that the beam quality of BA diode laser can be improved by the proposed carrier diffusion stripe devices. A comprehensive study has been made on device design, fabrication process and output characterization of 790nm wavelength single quantum well (SQW) BA diode lasers, which is described as follows:1. The principle of the designed device and fabrication process has been given on the base of diode laser theory and process.2. A Gaussian stripe BA SQW device and a rhombus stripe BA SQW device have been successfully fabricated.3. The output characteristic of the designed device has been measured compared with that of traditional BA devices. The influence factor on beam quality of BA devices has been analyzed.