| With the rapid development of semiconductor industry, increasing the diameter of silicon wafer is the way to meet the imminence demands of high integrity of chip. So many device factories are developing large size single crystal furnace in recent years. TDL-150 SCF is, namely, the single crystal furnace to produce CZ-Si single crystal up to 300 mm diameter.In the paper,optimize designing of TDL-150 SCF is presented, and the parts of hearth, furnace chamber, furnace cover was designed by ourselves, and completed all the technical files.FEM(finite element method)is the most important computation method in the 20th century, which applied to the field of semiconductor. Because of the large stuff of polycry- stallin, complex structure of furnace and expensive cost, computer simulation is a best way to optimize design SCF, shorten design cycles, reduce production cast. In this paper, the thermal field in the single crystal furnace was systematically researched. Thermoelectricity-coupled field of graphite heater was simulated. The current and voltage was defined in melting polycrystalline silicon;The flow velocity of cooling water system was optimized,in purpose that the furnace was well cooled, and this will help to reduce production cast; The position of the crucible was determined to make sure that the process melting polycrystalline was smooth going. The thermal field was completely simulated at any of various stages in crystal growth., and the thermal distribution was calculated, which decided rationality of the thermal field. Making use of the theory of Vc/G(Vc the velocity of CZSi, G temperature gradient)that Dornberger put forward, the critical issues was discussed, and the position of OISF-ring was forecasted; Argon flow was visualized by the simulation of argon gas flow field in the furnace adopting new type of heat screen. The influence of argon flow on C,O contents in monocrystalline silicon.was discussed. |
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