Study Of The Growth And Properties Of Silicon Carbide Epilayer

As a wide-band-gap semiconductor, SiC possesses great potential for high power, high frequency, and high temperature electronics applications. The controlled growth of high-quality epilayers is a key issue in the realization of SiC electronics. This thesis focuses on the epitaxial growth of SiC and Material characterization.First, the temperature dependence of the electron Hall mobility in n-type 4H-SiC is proposed. After a brief overview of different epitaxial layer growth techniques, the homoepitaxial chemical vapour deposition (CVD) of SiC with a focus on hot-wall CVD is reviewed. Hot-wall CVD is the most used equipment for growing SiC epilayer. Propane and silane are the precursor for growing SiC. The chemical mechanism and the influence of growth parameters on growth rate and layer uniformity are discussed. The the nitrogen incorporation in SiC epitaxial layers is also discussed. Material characterization is considering crystal structure and defects.Characterization of single-crystal SiC polytypes using Raman scattering spectroscopy is mentioned in this work. Defects observed in SiC CVD layers are micropipes, dislocations, and polytype inclusions (which sometimes appear as triangular features). This thesis analyzes the factors influencing the production and density of surface defects. These include substrate characteristics and growth conditions such as Si/C ratio.