The Study Of The Deposition Of SiO₂ Films With RF Cold Plasma At Atmospheric-pressure

The growth of the SiO₂ is an important technology in the manufacture of microelectronics. So many novel techniques for SiO₂ deposition have been developed. Recently, much research attention has been paid to the atmospheric pressure RF cold plasma for films deposition.In this paper, a new RF cold plasma source at atmospheric pressure used for SiO₂ deposition on 2 inches silicon wafer and kapton is introduced. Tetraethoxysilane (TEOS) was adopted as the precursor. The effects of the RF power and oxygen flow rate on deposition rate were studied. Reactive gas phase species were obtained by optical emission spectroscopy to reveal the possible process of SiO₂ films deposition. This result exhibited that the active oxygen atom at 844 nm was correlated with the films deposition.The result showed that The RF cold plasma at atmospheric-pressure is successfully adopted to deposit SiO₂ films in a large area. For its advantage of no constraint to a chamber-based process and the low deposition temperature for the low melting point substrate, the RF cold plasma method shows enormous potential of large-scale application in the films deposition.