| Gallium nitride (GaN) is one of the promising wide bandgap compound semiconductor materials .III-nitride compound semiconductor covers the ultraviolet to visible spectral region. Amongst these ,it shows unique applications in green ,blue or ultraviolet light emitting diodes(LED), UV detectors and blue lasers ,Low thermal carrier generation rates and large critical breakdown field make them attractive for the development of electronic devices capable of reliable operation under extreme conditions ,such as high power ,high temperature and in nuclear environment of high energy irradiation on the material properties of GaN. So there are so many institutes to research it .However, there are relatively few reports on the effects of irradiation in the electrical and optical characteristics of GaN-based device. The electron irradiation damage of GaN Schottky UV detector ( Optoway. Inc, OUVC1-GNA2) has been observed. GaN Schottky diodes have been made to study the reason of electron irradiation-induced damage and effects of high-temperature electron irradiation.The effects on I-V characteristics observed in the Schottky diodes indicated that even a light-dose irradiation would obviously reduce the reverse breakdown voltage but slightly enlarge the reverse leakage current. The reason that the irradiation induced failure of GaN devices was due to the damage of Au/GaN Schottky interface .The reverse breakdown voltage is influenced by change of electric field after electron irradiation. Then, the electrical characteristics of GaN Schottky barrier diode irradiated are recovered after annealed at (below or equal to )100℃. During... |
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