Znic Oxide Film Growth And Annealing Effcet On Properties Of Films

ZnO is a directed band semiconductor with a big binding energy. It has gained substantial interest because its large exiton binding energy (60meV), which could lead to lasing action based exiton recombination even above room temperature, such as LED, LD and so on. Furthermore, ZnO has properties of piezoelectricity and photoelectricity, so it can be applied as surface acoustic wave sensor, piezoelectric resistance and detection materials et al.All my samples with good orientation are prepared by RF sputtering. Then we invest surface morphology and crystal structure, optical and electrical properties of ZnO films by AFM, XRD, Hall testing, ultraviolet-visible spectrum photometer and XPS et al.ZnO films are fabricated on GaAs substrate. Its growth kinetic is studied through root mean squre roughness (RMS) changing with time by AFM. The growth can be divided into three sections: island growth, diffusion growth and second island growth. It is conformed by debsity of peaks, one dimension power density spectrum (1D PSD) and two dimension power density spectrum (2D PSD).Films properties are related with the substrate. So we select LiNbO3 as the substrate to invest the correlation between ZnO films and different substrates. From XRD spectrum we can only find two diffusion peaks ZnO (002) and ZnO(004), showing that its crystal grain have high orientation along c axis. LiNbO3 with ZnO films can absorb any wavelength light smaller than 380nm, contrast to 320m without films, and the near band absorption is quite steep. Otherwise we also invest the effect of different parameters such as substrate temperature and O2/Ar ratio on ZnO film while growing, when the films fabricated at 600℃and O2:Ar ratio equal to 1:2, the best quality films can be obtained.At last we invest effect of the anneal temperature on films, the resistivity of ZnO increases when enhance anneal temperature under 550℃. But above 700℃, the resistivity decreases suddenly, as the Nb ion diffuse from LiNbO3 into ZnO and occupied the interstitial sites. Nb ions, as donor doping in ZnO film,...