Research Of Rf Ion Source And Computer Simulation Of Ion Attracting System

With optics and semiconductor industrial development, more and more ion source have been used on the film coating equipment.Today, ion source has been applied to solid surface immited, minuteness processing, vacuum coating, and became hotspot of modern industry. Ion source include Kaufman ion source , end-hall ion source, ECR ion source, RF ion source and so on. Rf ion source with magnetic coupling theory has the character as follow: non filament pollution, long time working with reaction gas .So it became more important in ion industry .We have researched RF ion source in space science and application research center Chinese academy of science and excogitated broad beam radio frequency ion source. The theory is that electron launched by electron gun is inducted into discharge chamber with screen voltage attracting, gas will be charged by inputting RF power. Ion can be attracted by screen and accerlate voltage. This new typical ion source can make 160ma ion current under 500 Screen voltages, and can be widely applied in integrate circuit manufacture.Our work is main in these aspects: rf ion source inductive couple, magnetic field change and simulation of the ion movement with computer.