A Study Of Thin Epitaxial Layer Growth

Many important circuit functions are implemented at thin epitaxial layers in IC. In the dissertation, the author has worked on three kinds of epitaxy layers.6" IC chip's production has play an important part in IC productions in china. But, our 6" epitaxy product quality was unable to meet production need. With large size wafer, the uniformity of thickness & Resistivity was out of control line.In this thesis, we have changed epitaxy reactor to ASM Epsilon E2000, which is low-pressure system with single wafer reactor. At low pressure it is easily to remove the impurity in the stagnant layer during growth, which will result in serious auto-doping. We have product 6" epitaxy wafer, which's Resistivity uniformity is below 3%, that is the best result can be found in inland (thickness 0. 1245μm & Resistivity 0.425Ω.m). We also made some 8" epitaxy wafer with good quality.By optimized decompression processes, we have product a multi-sige layer with low stacking fault. By change the sources flow ratio of silicon & germanium, the x of si_1-xge_x can be controlled from 5% to 30%.