Static Simulation Of Novel InP/InGaAs Double Heterojunction Bipolar Transistor

In recent years the heterojunction bipolar transistor(HBT) gained a lot ofinterest because of its virtues in the field of high-speed and high-frequencyoperation. For the purpose of predicting the device characteristics oroptimizing device design, several analytical and numerical studies on HBTshave been made. Semiconductor device simulation is playing an importantrole in integrated circuit technology, which can reduce production cycle andcost significantly. InP/InGaAs is a new material for HBT device because oftheir higher gain and high-speed operation compare with AlGaAs/GaAs HBTwhich is often used. Limited by the existing technical conditions, only abruptjuction InP/InGaAs HBT can be made, but device simulator such as ISE8.5can not simulate this kind of structure. This paper is about the simulation of InP/InGaAs based device. Devicessuch as homojunction diode, heterojunction diode and heterojunction bipolartransistors are simulated by using drift-diffusion model. Full hydrodynamicsmodel is developed to simulate heterojunction device. The word "full" meansthat the mean energy of carrier contains kinetic energy, which is usuallyignored in other literatures. In our opinions, the convective energy can not beomitted easily because it will be on the same order of magnitude of heatenergy when carrier reaches its saturation velocity. The simulator includes various kinds of physical models, such asgeneration-recombination models, high and low field mobility models. Inorder to get a stable solution, solution from DD equations is used as the initialsolution suppose for HD equation, which can be considered as a good guessbecause the solution from DD equations is close to the solution of HDequations in low electric field region.