| Chemical mechanical polishing (CMP) is used as a new technology which can offer a global planarization in the process of production of semiconductor. And it will play a more and more important role with the development of the technology of semiconductor and the reducing of the element of semiconductor. So preparation of CeO2 CMP slurry has a widely developed prospect.This paper used oxalic acid, sodium carbonate and ammonium bicarbonate to as precipitating agent to prepare cerium oxides. The appearance, component, particle size and polishing rate of products were characterized. According to the results, choose the preparation of cerium oxides which fit to be the abrasive of CMP slurry. To prepare ultra fine cerium oxides by high speed ball mill and disk centrifuge.This paper was mainly adopted decentralized method preparation CMP polishing slurry. Through considering about the influence of different solid content, different pH value and different surfactants to the performance of CMP slurry.The results show:The CeO2 which is prepared by using oxalic acid as precipitating agent has perfect crystal and high polishing rate. Through high speed ball mill which uses 0.6-0.8mm zirconium oxides and has balled 90 minutes and disk centrifuge which operates at 6000r/min can produce ultra fine CeO2 which particle size distribution even and median particle size is 300nm.When the solid content of CMP slurry is 2%, pH value is adjusted to 3 by HNO3 and adding 0.2% PEG 1000 as surfactant, the polishing performance of slurry is the best:the polishing rate is 76.38nm/min, the surface roughness is 0.805nm and selectivity is 33.6. |
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