The Research Of Pressure On Mosfet Transconductance Modulation

MOSFET has merits like fine heat stabilization, large safety operation area and so on, so it attracted people's attention very early. Back in the 60s last century, researchers have been on the MOSFET's internal structure and working principle of doing the corresponding analyse. MOSFET transconductance is an important parameter, as described by the gate voltage on the source drain current control, been widely used in the amplifier circuit, many people on the small size of the transistor, a narrow channel MOSFET conducted extensive research, but the further inverstigation of the pressure change in MOSFET transconductance need to be done.The paper have done particular theory research an analytical calculation on impurity scattering of theⅢ-Ⅴsemiconductor materials affected by pressure and transconductance characteristics basing on semiconductor heteroj unction materials and energy-band structure.First the author made a qualitative description and FET is given band structure, effective mass, effective mobility, quantitative relationship formula and gate voltage, gives a quantitative description of electrostatic properties of semiconductor. Further study the working mechanism of the MOSFET and the formation of conductive channel.Secondly according to molecular beam extension direction along (001) establish MOSFET model, the impurity scattering rate of conductive channel of hetero structure two-dimensional electron gas(2DEG) is analyzed. Including under the pressure the changes and the trends of barrier height, effective mass, effective mobility, and gives relationship between the transconductance curve,provides a theoretical basis.FinallyⅢ-Ⅴcompound AlGaAs/GaAs heterojunction system is adopted, using mapping sofeware such as matlab and origin discussed the curve between different pressure and transconductance, simulate of the 2DEG in the ionized impurity scattering, surface density, the ground state electronic kinetic energy variation with the AlGaAs spacer thickness of L.Obtain transconductance the stable relationship of change with pressure value. Provide a appropriate reference for the device designed.In brief, the paper through under the different pressure AlGaAs spacer thinkness L changes cause the mobility shift in conduction channel get the curves between pressure and transconductance. It is theory foundation for the performance influence of semiconductor devices on varable condition.