New Device Scalable Model Development Of SiGe HBT And GaN HEMT

With the rapid development of global communication market, the field of application of monolithic microwave integrate circuit (MMIC) expands continuously, which also set high demands on the devices'performance. Heterojunction Bipolar Transistor (HBT) applicability constantly widens in fields of Satellite Communications, Mobile Communications for its advantages such as high current gain, high cut-off frequency, high driving capability, low phase noise, high power density and so on. As we known, it is important of establishing an accurate HBT Scalable model for circuit design and simulation because of the expanding of HBT's applications.At present, the third generation wide bandgap semiconductor material GaN has the capability of wide bandgap, comparing with BJT, MOS, and GaAs device, GaN HEMT shows the performance of high power density . At the same time the research indicates that GaN HEMT has also the performances of high frequency, low noise, high efficiency, and high linearity. As a result of the HEMT more and more widespread application,it is important of establishing an accurate HEMT Scalable model.According to certain model topology and model equation, through accurate model parameters extraction technologies and methods, And on this basis, development of scalable model based on the specific model will bring very important significance for monolithic microwave integrate circuit. The precision and reliability of model, meanwhile the feasibility of development of scalable model ,was decided by the rationality and quality of parameter extraction arithmetic. This thesis will be divided two parts in view of HBT and HEMT to describle.The first part, the establishment of SiGe HBT scalable model based on the HICUM, firstly the application principle of BJT transistors are described, secondly, the process of SiGe HBT has been introduced, then, HICUM model and parameter extraction method have been detailed introduction and improvement, and finally, a scalable HICUM model for high-speed SiGe HBTs is developed based on HICUM model in this paper. This model is well applied to simulation software of ADS and Hspice. The scaling is mainly based on different physical dimension of individual devices, all the scalable parameters in the scalable equations are extracted directly from the measurement data of various geometry. The correctness of this scalable model is further verified by the quite good fit between measured and simulated results on DC, CV, Ft and S parameters at the frequency up to 30 GHz. The second part, the establishment of GaN HEMT scalable model based on EEHEMT, at first, GaN material properties were introduced, followed by AlGaN/GaN HEMT introduced the working principle, then from HEMT device performance improvement and puts forward a new kind of epitaxial layer structure, and finally through testing and simulating a serial of the compound channel Al_xGa_1-xN/Al_yGa_1-yN/GaN HEMT device, and on the basis of parameters extraction by using Agilent's EEHEMT model, EEHEMT scalable model has been established, while in ADS and Hspice achieved a great verify.