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Study Pn The Characteristic Of New Structure SiC PCSS

Posted on:2012-11-09Degree:MasterType:Thesis
Country:ChinaCandidate:Q LiuFull Text:PDF
GTID:2178330332987958Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
Photoconductive Semiconductor Switches(PCSS) have simple structure and highqualityperformance compared with the traditional switchs.This device has attractivepotential and prospect in various fields such as UWB and ultra-fastelectronie.At first,the history and the development course of the PCSS have been reviewed,two different kind of operational modes(Linear mode and Nonlinear model) have beendiscussed. The characteristic of PCSS material has been analyzed. Based on the aboveconsiderations,a new hetero-structure SiC PCSS has been propose.It is good atoperating in radiation and high temperature condition.Second,the equivalent model of PCSS has been built.In the circuit,the PCSS can beconsidered as a resistors and capacitors in parallel. By solving the carrier continuityequation, the expression of resistance has been obtained and we get the value ofcapacitors from the experience formula.Then the numerical simulation was performed by the computer,such as the thePCSS characteristic in different optical pulse wave lengths, different optical pulse power,different lengths of device, different circuit voltage.At last,the spectrum of PCSS hasbeen analysised.
Keywords/Search Tags:SiC, new structure, PCSS, simulate the characteristic
PDF Full Text Request
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