The Analysis Of PIN Diode Avalanche Characteristic

With the rapid automotive industry in the supply line in parallel on many electronic controllers and devices in the past so different, cars often running a variety of electronic interference in the production, throwing the load will produce a large transient voltage and surge current. Avalanche rectifier diodes can effectively suppress the transient current and voltage, protecting the car's electronic regulator, electronic ignition, electronic fuel injection system and other important components. Automotive avalanche rectifier diodes used in the automotive alternator, the changing work environment because of poor, making these diodes in the diode performance requirements more stringent than the ordinary, such as good high temperature characteristics, high reverse surge capability, avalanche Rectifier diode can effectively suppress the transient current and voltage, protecting the car's electronic regulator, electronic ignition, electronic fuel injection system and other important components, while the anti-reverse surge current capability is an important vehicle indicator of the rectifier diode.The main purpose of this paper is the vehicle avalanche rectifier diode avalanche breakdown characteristics of the theoretical and simulation analysis, the first was blocked by an avalanche rectifier diode design parameters to obtain the structural parameters of avalanche rectifier diodes, and the experimental data and the software simulation of Reasonable parameters were validated. Secondly, again the reverse avalanche rectifier diodes vehicle damage mechanism of over-current analysis, the increase in the structural design measures to reverse over-current capability. Local overheating and dual role of avalanche damage induced by the main device, the structure of non-penetrating structure and the possible increase of the base doping concentration can increase the avalanche rectifier diode reverse over current capacity. Two-dimensional device simulation using MEDICI software avalanche avalanche rectifier diode characteristics were simulated for different base widths and different base concentrations and different temperatures, some of the buffer layer structure of the avalanche diode rectifier is simulated avalanche characteristics And the results compared. Proved to increase the concentration of base and improve the base width of the buffer layer structure to improve the avalanche rectifier diodes for surge current capability of the role. Avalanche rectifier diode on the phenomenon of dynamic avalanche of some studies, the dynamic avalanche avalanche rectifier diodes current phenomenon is caused by the formation of filaments of the important reasons diode damage.