Study On Electronic Mobility For Strained Si

Strained Si has broad prospects in high-speed/high-performance devices andcircuits for its advantages of high mobility, adjustable band structure and compatiblewith Si process, becoming an important research field of concern at home and abroad.The essential factor in device performance is the strained Si electronics mobilityenhancement. The in-depth study in strained Si electronics mobility is the theoreticalbasis for the development of the high-speed/high-performance devices and circuits, andhas important guiding significance on new strain silicon devices and circuit design. Thisthesis mainly analyzes electronic scattering mechanism of the strained Si and builds amodel of electronic mobility of strained Si on differences of the crystal face andorientations. This paper firstly analyzes the formation mechanism of the strained Si, so,necessary physical parameters which solving strained Si scattering probability areobtained. Then based on Fermi golden rules and Boltzmann collision approximatetheory, a series of scattering probability models about mechanism are built, includingionized impurity scattering, acoustic phonon scattering and inter-valley phononscattering. After that, taking conductivity effective quality and mean momentumrelaxation time, this paper finally get electronic mobility theoretical model of strained Sion differences of the crystal face and orientations. In addition, this paper build modelwhich about Ge components are turned into stress intensity, expanding the applicationrange of mobility.