Study On The Far-Field Intensity Distributions Of High-Power Semiconductor Laser Arrays

Because of their compactness, brightness, and high efficiency, semiconductor laserhave been widely used in many scientific and engineering applications. However, theirpotential applications are limited by the poor output-beam quality, owing to theirdifferent beam-divergence angles in directions of perpendicular and parallel to thejunction plane .Because of the asymmetrical waveguide structure, the complicatedoutput field distribution of semiconductor laser brings many difficulties in practicalapplications. In almost all applications, the output beam of the LD must be shaped byuse of an appropriate optical system. To design an optical system , one should have anaccurate expression for the far field of a beam emitted from the LD. Furthermore, byusing an accurate far-field model one can evaluate the coupling efficiency of the opticalsystem.In this paper, the output field of a conductor laser has been expressed as a bi-peakstructure. Two decentered Gaussian modes have been used to construct the waveguidemodes of the high power LD, then the far-field solution of the Helmholtz equation canbe obtained by use of the boundary condition at the output plane of the LD. Based onthis model, three diode lasers are simulated by MatLab. The numerical results of thenew model agree with the theoretic analysis.The main work of the paper is summarized as follows:1) The single emitter high-power LD with bi-peak far-field distribution is derivedand discussed, then the numerical simulation is made by use of MatLab.2) Based on the single emitter model, the intensity distribution of a high-powerLD bar is simulated.3) Stack high-power LD model is derived and simulated and analyzed.4) Some LD's defaults, such as unlighting emitter,smile are discussed andanalyzed.