The Behavior Of Insulated Gate Bipolar Transistor (IGBTs) In Low Temperature

The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device able to manage high power with high frequency. The great development of the IGBT characteristics in the recent years has made it a dominating device in the middle-high power application field. Due to the increasing use of superconductors in major areas of power system and power electronics, it is of interest to consider the possibility of using IGBTs at the cryogenic temperature of operation of superconductor materials. A comprehensive study of the behavior of IGBTs at temperatures from 77 K to 300 K was presented. The study includes Punch through (PT) and Non-Punch through (NPT) structure and Trench gate and planar gate structure. A comparison of the performances of the different structures is presented. Moreover, Possible impacts on application were discussed. Based on the device fabrication technology and the theory of carrier transport, Physical mechanism of IGBTs operating in low temperature was analyzed. Simulation results of a properly modified analytical IGBT model were presented and validated by comparison with experimental data.