The Research On Theory And Process Of Wafer Bonding Technology

Wafer bonding technology is a process that two clean and flat wafers are jointed with chemical bonds on wafer surfaces in a required condition. The technique provides a great freedom to combine different materials. But the area of silicon becomes bigger than before, so there are bonding cavities in bonding interface and the bonding strength can't increase. So we will keep on study this technology.In this paper, the principle, the process, and the measurements of silicon direct bonding are studied. The paper is aimed at providing an overview of the current understanding of the factors determining the bondability and strength of the bonding obtainable. And, through improving the process of SDB, we can make a prefect SDB. The author assesses the present state of the experimental methods for determining basic parameters governing the adhesion and develops some relevant equipment.That defects are mainly in interface of SDB affects bonding strength. According to Weibull theory, defect distribution in SDB interface is studied. The relationship between the defect distribution of bonding wafer and Weibull modulus is discussed. This relation is confirmed by experimentations, and it can explain why wafer bonding strength is changed by annealing temperature.