The Preparation Of Pentacene Field Effect Transistor

Methods of preparation of pentacene thin film by PVD and pentacene field effect transistor are reported. The pentacene thin film is characterized by SEM and XRD. A typical scanning electron microscope planar image of a pentacene thin film shows the thin film is very smooth. The XRD pattern of pentacene thin film shows the thin film has good crystal character. The temperature, and the velocity of nitrogen influence the deposition of pentacene. The best qualified pentacene film was obtained under the condition of the temperature at source zone of 230*C and the velocity of nitrogen flow of 0.06m3/h.To prepare the pentacene field effect transistor, silicon is used for growing silicon dioxide as gate dielectric by wet oxidation, and the alloy of gold germanium nickel (AuGeNi) is vacuum evaporated to the substrate as the gate electrode. The source and drain is also prepared by vacuum evaporation through a mask.The I-V characteristic of the pentacene field effect transistor is measured by XJ4830. The mobility of pentacene thin film is around of 0.3cm2/V.s. The pentacene field effect transistor can be driven when the drain voltage is 2V-4V, and the pentacene field effect transistor has low voltage character.