The Research Of Designing And Processing For The Microwave PIN Diode

With the development of radar, microwave communication, satellite communication and microwave measure, the application of the microwave control circuit is extensive day by day, and is paid attention to by people more and more. Control function of various kinds of the microwave control circuit is realized through controlling component. Because PIN diode has good characteristics that are high breakdown voltage, large controlled power and fast speed of the switch, it applies to the microwave control circuit such as the Microwave Switch,the Phase Shifter, the Amplitude Limiting and the Modulating,etc. The design and key process research of the microwave PIN diode is written in the article.The basic operation principle of PIN diode, the main parameter of the tube, microwave characteristic and PIN diode main application are discussed. A few methods are introduced at home and abroad on producing PIN diodes: diffusion, ion implantation, and epitaxial. But as concerning microwave PIN diode of high breakdown voltage, the craft can't already meet the demands. Traditional deep diffusion and thick epitaxy craft can be replaced by Si/Si bonding in order to realize the high breakdown voltage. Compared with thick epitaxy, bonding goes through the shorter high-temperature time, so that material performance keeps better and the performance of the device can be improved. Impurity of epitaxy is simulated with Tsuprem4 software and is compared with the impurity of bonding. Comparative result shows bonding is more suitable for fabricating the device of high breakdown. It is studied that the roughness of silicon surface influence bonding. Experimental result shows if maximal roughness exceeds 40um, that is to say average roughness exceeds 20um, the quality of bond isn't eligible.The basic theory of the semiconductor device simulation, the device model of the semiconductor and MEDICI tool software are analyzed in the article and reverse model of bonding PIN diode is set up. The design and the simulation of bonding PIN diode are carried on with MEDICI software at the same time. The thickness of I layer, series resistance, the impurity and the area are calculated and simulated respectively. Both the simulation result and the calculation result show if the breakdown voltage exceeds 2000V, the I layer thickness will demand 200um and the impurity density will need 4×10¹² /cm^-3.