The Study Of Ion Implantation And Ohmic Contact For SiC

In the paper, the characteristics of ion implantation and ohmic contact of SiC are deeply investigated. The influence of different polytypes of SiC and channeling effect on ion implantation are considered. The concentration distribution results of the P, N, Al implanting into SiC are given by TRIM, which is useful to implantation energies and doses in the experiment. Comparing the simulation of TRIM with the experiment value and finding their difference, modifying the TRIM result by function of PearsonIV to solve the influence of the channeling effect.To investigate the ohmic contact of low resistance and high stability, the energy band models of n- and p-type SiC ohmic contact formation mechanism are put forward. The choice of proper contact metal and the stability of contact are discussed. To improve the processing flow, the ohmic contact is optimized on the basis of the processing flow and the possibility of n- and p-type SiC ohmic contact in a flow is studied.The ion implantation optimum processing is founded according to large numbers of literatures and domestic processing condition. The problems happened in the experiment and solving methods are put forward, the experiment is processing.In this paper, some new ideas and techniques for silicon carbide simulation of ion implantation are proposed. The results of our study provide important formation mechanism of ohmic contact and confirm the theoretical foundation of silicon carbide process for the further development.