Study On The Key Technologies Of InP-Based High-Speed Monolithically Integrated Photonic Devices

The thesis is focused on the key fabrication technologies of InP-based high-speed monolithic integrated photonic devices, especially antireflection (AR) coating and microwave submount for the packaging of high-speed photonic devices.Firstly, we designed and fabricated a low cost integrated light source for local area network (LAN) and metropolitan area network (MAN) applications. The integrated light source is based on identical-epitaxial-layer (IEL) integration scheme, and a saturable absorber is used to realize wavelength compatibility between the F-P laser section and the EA modulator section. Dry etching technology was adopted for the fabrication of the integrated device. The fabricated device was tested and the factors that influence the device performance were discussed.In order to improve the performance of integrated devices, especially for super luminescent device and DFB laser/EA modulator integrated device, we have developed a very efficient coating process to realize AR coating of device facets using plasma enhanced chemical vapor deposition (PECVD). AR coating with residual reflectivity of 6.8(10(4 has been demonstrated with SiNx film deposited by PECVD. For the practical application and industrialization of the integrated devices, we have studied the packaging technologies of DFB laser/EA modulator integrated light sources. By improving the fabrication procedure of the thin film resistor, we have demonstrated microwave submount with a flat reflection response and a reflection coefficient below (16dB up to 40 GHz. Meanwhile, Pb/Sn solder bumps have been formed on the submounts to facilitate the die bonding of the integrated devices.Based on the above work, we tested the performance of DFB laser/EA modulator integrated devices mounted unto the microwave submount with impedance matching network. The results indicate that heat dissipation is very efficient and CW operation of the integrated devices can be ensured. Meanwhile, the thin film resistor is found to have greatly improved the impedance matching of the microwave signal.