Experimental Investigation Of The Visible Light Arrays Of Si-CCD Irradiated By The Laser

The photoelectric sensors are widely applied in many fields for their merits. However, the high power laser can damage them easily. The research on the response character of the detectors to laser irradiation plays a very important role. The response characters of the visible light band Si-CCD image sensor to the irradiation of in-band and off-band laser respectively are studied in detail. The laser includes different modes of CW(Continuous Wave) and PW( Pulse Wave). The detector response to the irradiation of CW laser is mainly saturation effect, and the PW laser makes irreparability damage effect easily.The major work that have been done are as follows:1. Irradiated by the 532nm 808nm 1064nm CW laser respectively, CCD output is saturated. The saturation thresholds are given after the experimental investigation. We can learn by experiment that CW laser makes CCD saturated easily, but damaged difficultly. It is validated that the visible light CCD doesn't respond to the CW 1319nm laser.2. The damage thresholds of the visible light CCD irradiated by the PW 532nm 1064nm laser are measured. Studying the damage appearance and the photos that CCD made after being damaged by laser, we find the mechanism of damage qualitatively. And irradiated by the PW laser, CCD single field saturation is studied.3. We found a high power pulse while triggering 1064nm and 1319nm CW Laser. The pulse made the CCD device damaged. We managed to study whether the pulse laser made the damage or the Krypton light did.4. The damage threshold of the visible light interference filter target irradiated by the moving off-band laser beam is given after the experimental investigation. The experimental results are studied qualitatively, with the emphasis on the comparison of the still laser and the moving laser beam induced damage.