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Si And ZnO Nano Structures: Fabrication And Applications

Posted on:2005-03-10Degree:MasterType:Thesis
Country:ChinaCandidate:W M WangFull Text:PDF
GTID:2168360122494031Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Astonishing characteristics of nano-structure material, and the great application potential in Photonics, Electronics, Magnetics and Bio-chemistry, absorb much research interest.In this Master degree thesis, fabrication of Si Nano-crystalline(SiNC) film by electro-chemical method is discussed; its applications in microwave IC and field emission are studied. Furthermore, fabrication of ZnO nano-structure by thermal evaporation and its application in field emission are studied experimentally. The significant results are listed as following:1) The parameters of forming Si Nano-crystalline film by electro-chemical method are studied systematically. The optional parameters have been obtained. The characteristics of this material are studied by transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray diffraction (XRD), and Raman-shift. The results show that the particle size of SiNC film is scattered from 10nm to 20 nm, the alignment is compact, the orientation is uniform, the expansion of lattice constant is negligible and mechanical robustness and stability is good.2) The application in Microwave IC is studied. Its resistivity is measuerd. A basic microwave circuit, coplanar wave-guide is fabricated on Si nona-crystalline film. The insert loss is about 5dB/cm from 20-40 GHz, which is very close that of quartz, and much smaller that ploy-silicon's. The result will promote significantly compatibility between COMS circuits and RF circuits.3) Efficient field emission was observed from Si nano-crystalline film. The turn-on field is about 3 V/u m at 0.1 U A/cm2 of current density, which is close to carbon nanotube film's. The threshold field is about 9 V/u m at lmA/cm2. The density of light is above 103/cm2.4) Tetrapod-like and wire-like ZnO nanostructures are successfully synthesized by a novel thermal evaporation method. The field emission of tetrapod-like ZnO nanostructures was studied. The mechanics of ZnO growth is discussed. The turn on field was found to be as low as 3.7 V/ u m at 0.1 P A/cm2 and threshold field was found to be as low as 6 V/ u m at at lmA/cm2 current. The results demonstrate that Tetrapod-like ZnO nanostmcture has great potential in field emission.
Keywords/Search Tags:Electrochemical Etching method, Si Nano-Crystalline(SiNC), Insert Loss, Field emission, Thermal Evaporation, ZnO nanostructure
PDF Full Text Request
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