Study On Properties Of Aurum And Platiunm Dual Doping FRD

Aurum(Au) and Platinum(Pt) doping techniques are widely used to fabricate the fast recovery diodes(FRD), and both of them have merit and demerit. Au and Pt Dual doping technique is reported in this paper, which is compared with Au doping and Pt doping technique. The optimal technology will be chosen by comprehensive consideration of properties of all parameters of FRD.This paper has reported the fabrication of Au doping, Pt doping and Au and Pt dual doping FRD. We have measured the parameters of the three samples, including trade off of VF-TRR. relation of TRR and R at the temperature of 25℃ and 125℃, temperature properties of TRR, IR, VF ,and the property of VF~IR .The theory analysis has been reported that VF-TRR trade off of Au doping diodes is superior to Pt doping diodes, while its' high temperature reverse leakage current is much larger than Pt doping diodes. To considerate the merit and demerit of solo doping technique, we fabricated the Au and Pt dual doping FRD in our experiment, and got the technology and property parameters of Au and Pt dual doping technique through comparing to Au doping and Pt doping technique.The result of the experiment shows that property of VF-TRR of Au and Pt dual doping diodes is between Au doping diodes and Pt doping diodes, so do the properties of VF-IR, TRR-IR,VF-T and IR at high temperature. The technique of Au and Pt dual doping gives consideration to both Au doping technique and Pt doping technique, which shows the applied perspective in fabrication FRD.We have studied intensively on the temperature properties of the threeAu and Pt dual doping gives consideration to both Au doping technique and Pt doping technique, which shows the applied perspective in fabrication FRD.We have studied intensively on the temperature properties of the three samples and found that forward voltage drop(Vp) of Au doping diodes is the lowest, VF of Pt doping diodes is the highest while VF of Au and Pt dual doping diodes is between the formers. The reverse leakage current(lR) of the three samples changes very slowly with the temperature between - 75 ℃ and - 25 ℃,and the value of IR of the three samples are approximate, this shows that the leakage current of surface acts importantly under this temperature. The property of TRR-T of Au and Pt dual doping diodes is similar with Au doping diodes at high temperature and Pt doping diodes at low temperature, which is of technology value and theory value.The experiment of DLTS manifests that the three samples haven't been contaminated by other impurities and haven't contaminated each other,either. Au and Pt do not interact with each other in dual doping diodes and no new energy lever has been found...