Synthesis Of Tin Chalcogeniden Thin Film For Photoelectronic Application

Photoelectric device is an equipment by photoelectric effect to turn light energy into electric energy.Since the 19th century,people found the photovoltaic effect and up to now,all kinds of photovoltaic equipments emerge in endlessly,and solar cells play an important role as a representative of the photovoltaic device.It has experienced three stages of development.The first generation of solar cells is represented by elemental Si,including monocrystalline silicon and polycrystalline silicon,and the highest photoelectric conversion efficiency are25%and 21%respectively;The second generation of solar cells based on inorganic thin film solar cells,the PCE can reach 20.1%.The third generation solar cells are new types of thin-film solar cells,such as dye-sensitization solar cells,organic solar cells,perovskite solar cells and so on.Perovskite as a new light harvesting material has obtained a fast development in recent years and the cell of PCE can reach 22.1%.Now,the key problem of solar cell is high-cost,so chasing the low-cost and high PCE is the eternal theme for solar cells.The elements of sulfur and tin are abundant elements and non-toxic in the nature.Tin sulfide originated from herzenbergite and it is a kind of p-type semiconductor,on account of the high absorption coefficient,high carrier mobility,appropriate band gap and suitable match with the visible light spectrum,it gradually become the excellent light harvesting material in solar cells.The SnS thin film always synthesised by complex methods like evaporation and sputtering,so these methods increase the preparation cost.However,the solution-phase deposition is the common method to prepare the thin film.It is low-cost and the technology is simple.So in this paper,SnS thin film was prepared by solution-phase deposition via Thermo-reducing SnS₂ with a small molecular reducing agent.Through various characterizations,we can see that the prepared surface of thin film was compact and uniform,the crystal grown along?040?direction.The SnS thin film has a wide absorption range,which covers the visible light range very well.The SnS thin film as a light harvesting material in solar cell exhibits a short circuit current?Jsc?of 10.56 mA/cm²,an open circuit voltage?Voc?of 256 mV and a fill factor?FF?of 0.39,which leads to a PCE of 1.05%,showed that the SnS thin film can be used as light harvesting material in solar cells.Tin disulfide is a kind of n-type layered semiconductor,the prepared temperature is low,and the synthesis method is also simple.It is a kind of environmentally friendly electron transport layer to replace TiO₂ in perovskite solar cell.So this paper is based on SnS₂ as electron-transport layer in perovskite solar cells.The SnS₂ thin film was prepared via thiostannate of?NH₄?₄Sn₂S₆·3H₂O by thermal decompose.The experiment used pure SnS₂and hybrid thin film of SnS₂ and SnO₂ as electron-transport layer in perovskite solar cell.The pure SnS₂ as electron-transport layer have achieved a PCE of 3.5%and the hybrid thin film of SnS₂ and SnO₂ as electron-transport layer have achieved a PCE of 8.17%,showed that hybrid thin film has a potential to be used as electron-transport layer.