The Study Of Bipolar Voltage Controlled MOS Field Effect Transistor On SOI

This paper summarizes the present situation of modern microelectronic device is. With integrated degree of circuits increasing, and the characteristic sizes of technics minishing as well as the device sizes turning into sub-micron and deep sub-micron, there are many problems. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction MOS transistor (BJMOSFET), a novel semiconductor device. This new device has shared the advantages of BJT and MOS. What more the new device has the following advantages: larger saturation drain current, wider frequency bond, better temperature stability and its switch performance is improved too. The design of this device has been put forward from these aspects of configuration, technics and power waste. Especially according to later developing demand of integrated circuits, which require low-voltage low-power at work, the low-power optimization designs of BJMOSFET are analyzed and discussed in detail from the factors that influence the threshold voltage, the materials that are used to fabricate it and the substrate materials. Hence, we can receive some theoretical backgrounds of manufactureing this device. Several methods manufacturing the SOI(simulator on silicon) materials are described and the main application fields of SOI devices are presented. This paper also presented the structure of SOI BJMOSFET and discussed and analyzed the advantages of this device by comparing with the bulk BJMOSFET. Its advantages are as fellow: no latch-up effect, better capability of resisting invalidation, much smaller parasitic capacitance, weaker hot-carrier effect and short-channel effects, and simpler technics, and so on. Considering the request of low-voltage low-power of SOC, the important role of SOI BJMOSFET is showed too. So this paper has an important significance on the field of research and development of devices.