Study Of Growth Technology And Structural Properties Of SiC Films On Sapphire Compound Substrate

As a wide bandgap semiconductor material, silicon carbide is an exellent material with superior thermal, electrical, mechanical and chemical properties for the fabrication of high temperature, high power, high frequency and radiation hardening electronic devices. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric-pressure chemical vapor deposition (APCVD) process. The effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. The structural properties of the films grown on sapphire compound substrate are studied by X-ray diffraction (XRD),X-ray photospectroscopy (XPS) and photoluminescence spectroscopy. The surface morphology is studied by scanning electron microscopy (SEM). The results reveal that the single-crystal silicon carbide films with smooth and continuous apperance are obtained under the reported experimental conditions.