Novel Silicon-based Infrared Detector

This society is an information one. The information capture in the infrared field, which is called the infrared detector technology, is widely used in the early-warning, guidance, night looking, track and space technology, astronomy, medical science, etc. The demand is still spreading, which has driven the research, development and production of the infrared detector into a period of rapid development.The infrared detector is classified into photon detector and thermal detector. The advantage of the photon detector is high detect sensitivity, quick response velocity and high response ratio. However, photo detector works at low temperatures generally and the detect wave band is narrow. The advantage of thermal detector is wide response wave band. Also, it can work at room temperature with simple operation. But the heating up and cooling down of macroscopic matter in thermal detector need a long period of time, which leads to a long period of response time, low detect sensitivity. Thus it is often applied in situation of low frequency modulation.For the limitation of the above infrared detectors, Prof. Shen has put forward a new physical idea that infrared detector can work at room temperature and has rapid response velocity. This paper is outspreaded on the base of this new physical idea.I MEMS(Micro Electro-Mechanical systems. is used to realize infrared detector in this paper. The present situation and developmental trend of infrared detector and MEMS, especially the prospect of MEMS, have been discussed in detail. Meanwhile, the key techniques of MEMS, especially those of the Si-based MEMS, have been introduced in detail.2 The superiority and feasibility of this novel infrared detector is demonstrated based on the discussion of the relative merits of the above mentioned infrared detectors.3 The key techniques to realize infrared detector, including bulk micromaching and bonding technique, have been studied in detail. The main contents are as follows:study on the etch-stop technique of N or P heavy-doping, study on the S13N4 as a screen film, study on the dissolving silicon technique, study on the influence of silicon surface appearance to it as a infrared window, study on grinding and polishing technique, study on the selective way of glass material, study on the way of manufacturing of glass film, study on bonding and its current-time character between bulk glass and silicon, etc.4. Some methods to implement the novel infrared detector have been put forward based on the research of the key techniques mentioned above. Meanwhile, the corresponding technology processes have been described and the elementary responses have been gained.5. The change trends of capacitance vs thickness, area, span of plate electrodes and press have been calculated. Also, the change curves have been displayed and the conclusions were drawn.