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Research On Golay-cell Type Of Uncooled Infrared Detector Based On MEMS

Posted on:2007-04-09Degree:MasterType:Thesis
Country:ChinaCandidate:X GaoFull Text:PDF
GTID:2178360185992312Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The appearance and advance of the technology of Microelectromechanical System(MEMS) give uncooled infrared detector a new power of progress. The features of uncooled infrared detector based on MEMS technology include: small volume, short reponse time, low power consuming, low cost, and et al. So the detector has a widely foreground of market.A new Golay-cell type infrared detector based on MEMS is presented in this dissertation. Its design of structure strives for improving performance of current Golay-cell type infrared detectors. The device's mechanism, thermal-mechanical models and optimiziation of performance are described in detail and some important principles in designing this type detector are concluded. The thesis also achieve the study and realization of three key sections in the frbrication process.In the first charter the history, directions of development, basic theories and applications of the infrared technology are introduced. And then the MEMS evolution and characteristics and the motivation of research on micro Golay-cell type infrared detector are addressed. In Charter 2, the new Golay-cell type infrared detector with simple structure and good performance potential is presented. The analysis of theory and optimization based on the design model are discussed to deduce some principles. The theoretical responsivity, noise equivalent power and 3dB bandwidth of the device are calculated, and it is showed that 32nF/W, 1.827×10-9W/Hz1/2, 29.3Hz respectively. In the end of Charter 2 the structure and way of realization of the device with an optical displacement meter are investigated. Then the performance and advantage of this detector are analyzed.In Charter 3 three key sections of fabrication process are discussed including the etching of pyrex7740, the selection and making of infrared absorbing film, the auto-stop etching for forming a thin silicon membrane highly doped by boron diffusion. In this charter the fabrication process and the problem of the layout is also discribed and solved. In Charter 4 the testing method, result of fabrication and its analysis are investigated. The last charter summarize the work of the dissertation...
Keywords/Search Tags:infrared detector, Golay-cell, MEMS, etching of pyrex7740, thin Si membrane
PDF Full Text Request
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