Mesoscopic Piezoresistive Silicon And Germanium Accelerometer Simulation And Design

This study is based on the Si1 - xGex/Si superlattice semiconductor films of" mesoscopic piezoresistive effect" of the piezoresistive accelerometer. In "the mesoscopic piezoresistive effect" theory, we design Si1 - xGex/Si/Si1 - xGex double potential resonance tunneling nano film structure and use MATLAB software for different sizes of accelerometer structure to designing and simulating, And using ANSYS finite element analysis software to design and simulate the structure of accelerometer.This paper designs a double beam structure of accelerometer, by using the finite element software ANSYS to do the acceleration sensor structure of static simulation,the modal simulation and harmonious response analysis. And we analysis the different parameters on the effect of different accelerometer and to optimize the structure design in order to meet the requirements of the stability and range. Finally, through selecting proper parameters, we design sensitive structure of 1g range.This paper also simulates static characteristic of the tunneling heterojunction and accelerometers. Si1 - xGex/Si quantum-well film structure of the maximum static piezo-resistance sensitivity improve an order of magnitude than Si film structure. sensitivity of accelerometer structure is more higher than silicon thin film accelero- meter structure.This study mainly innovation reflects in: breakthrough the traditional Power electric coupling principle, using resonant tunneling film as sensitive components, designed the accelerometer structure based on "the mesoscopic piezoresistive effect" theory.