HSG Process Of 0.13μm DRAM And The Improvement

New process method and capacitor structure have been used in advanced DRAM manufacture. This paper mainly solves the HSG(Hemispherical-Grain) process issue of 0.13μm stacked-DRAM. The trends of electrode resistance and the issue of DRT failure have highly impacted the capacitance of HSG process tool and the yield of production wafer. So the HSG process method has been studied and 2 relations are found in HSG process .One is the relation between HSG thickness and capacitance, the other is the relation between HSG thickness and DRT ((Data retention fail) failure. Base on these data analysis, the deposition time tuning of base POLY is used to solve the trends of electrode resistance. The decrease of HSG thickness and the enlargement of capacitance structure CD are used to solved the DRT failure. After these actions are taken, HSG batch size has been improve from 1 lot to 3 lots and DRT failure is nearly 0%. So the HSG tool capacitance has been highly improved.In this paper HSG thickness test was used to verify the HSG quality firstly and the result is very well. The thickness control model has been applied in HSG inline process control. The experiences provide the sample for HSG quality improves and the idea of process optimization can be used for the improvement of furnace loading effect.