Research Of Texture-etched ZnO Thin Films Used On Silicon Thin Film Solar Cells

Using a Zn target with 2wt% Al, ZnO:Al(ZAO)thin films which were used on silicon thin film solar cells were deposited on glass substrate by mid-frequency pulsed magnetron sputtering. Several important studies have been carried out as follow.1,The power used in the experiment was made by AE company in America. Firstly, ZAO thin films were deposited on glass substrate by mid-frequency pulsed magnetron sputtering. The influence of substrate temperature, spattering power, and working pressure on the films were studied. The result was: the resistivity of the thin films were improved as the substrate temperature (no more than 220℃) being higher, spattering power being larger, and working pressure being lower. The optimum technological parameters were determined, substrate temperature was 220℃, spattering power was 160W, and working pressure was 292.6mPa. The resistance was 6Ω, resistivity was 3.0×10^-4Ωcm, carrier concentration was 6.95×10²⁰/cm³ and Hall mobility was 83.8cm2/V·s. The average optical transmission was over 85% within visible light.2,Texture-etched ZAO thin films were prepared by etching the smooth films in diluted HCl. The influence of substrate temperature, spattering power, working pressure, liquor chroma, and etching time on texture-etched ZAO thin films were studied. The result was: the effect of the texture-etched thin films were improved as the substrate temperature being higher, spattering power being smaller, working pressure being lower. The optimum technological parameters were determined, substrate temperature was 250℃, spattering power was 80W, working pressure was 292.6mP, liquor chroma was 0.5%, and etching time was 20s.