The Fabrication Of Modulated Medium Frequency High Power Pulsed Magnetron Sputtering System And The Process Research Of TiAl Thin Films Preparation

In recent years, research and development at home and abroad up to anewtechnology which called High power pulse magnetron sputtering, the technologyis combined Dc magnetron sputtering and high power pulsed magnetron sputtering,the role of dc part is mainly to ensure that adequate pretreatment, makes the pulsecomes up easy, shorten the pulse fai delay time, its for sputtering materials andsputtering efficiency without actual effect; And can produce high power pulse partprompted sputtering materials from high power, is used for real meaningful part ofmagnetron sputtering. Peak power of HPPMS technology was100times that ofordinary magnetron sputtering, which is about1000~3000w/cm2, sputteringmaterials high ionization rate, and the highly ionized ion beams do not contain largeparticles, can good performance in the film is prepared.But the superimposed dc HPPMS technology also has certain disadvantages: dcpart proportion is higher, and cannot control, at the time of deposition film dc partscan’t provide for sputtering power high, the proportion of high power pulse is low,so the system of sputtering efficiency lower. Will in order to solve this problem, thispaper developed a intermediate frequency modulation pulse high power magnetronsputtering power supply, with low frequency pulse to replace the dc portion of thecommon high power magnetron sputtering system, as much as possible on thepremise of ensuring adequate pretreatment to reduce low frequency pulse duty ratio,the high power pulse duty ratio as maximum as possible, improve the system ofsputtering efficiency.In this paper, according to the MPP (Modulated pulsed power) technology ideas,designed for a medium frequency modulation pulse high power magnetronsputtering power supply, connect resistor load by changing the parameters of circuittest after the output signal waveform, comply with the design ideas and designrequirements. In power supply design and debugging process, through continuoustesting of adjustment to improve power supply input and output signal waveform,effectively improve the reliability and stability of the power supply.After complete the test of power supply, in order to validate the developedpower supply whether can get high ionization rate and whether can improve theefficiency of system of sputtering effectively, according to several typical targetmaterial,under the same condition of power for dc, radio frequency and high powerpulses were used respectively to three kinds of sputtering emission spectrometry inthe form of plasma composition test, through contrast analysis of spectral curve confirmed modulated medium frequency high power pulsed magnetron sputteringwith dc magnetron sputtering and radio frequency (rf) magnetron sputteringcompared with the ionization rate is higher, can effectively improve the system ofsputtering efficiency at the same time.After complete spectrum test, respectively using both dc and high power pulsedsputtering method under the condition of same sputtering up power, in preparati onof Ti-Al coating on matrix, and the corresponding mode of two kinds of sputteringlayer analysis test, the contrast test results, confirmed that the modulated mediumfrequency high power pulsed magnetron sputtering compared with dc magnetronsputtering deposition of thin film density is higher, the better film quality.