Sol-gel Fabrication And Character Investigation On Ba_xSr_1-xTiO₃ Thin Films

Tetragonal Ba~Sr1~TiO3 (I3ST) thin films have been prepared on Pt/Ti/Si02/Si substrates by sol-gel processing. Dielectic property and ferroelectric property of the films arc investigated. Trial explanation to the results is given. Details of the experiments are presented in this article. In which, temperature, humidity of the ambient and the stabilizing agent are found to play important roles in getting high quality BST thin films. Post treatments of the films showed that BST thin films get crystallization at around 7OO~C ~?OO0C. When annealing temperature goes down to less than 700 揅, it抯 hard for I3ST thin films to ciystallize. The Dielectric property of the films is researched in detail. The Dielectric Constant (憇r) changes as the frequency increases, as the Ba/Sr ratio changes and as the thickness of the film changes. Difference of Dielectric Property between Ba04Sr0.(,Ti031 Ba11~,Sr04TiO3 (BST46/64) multi-layer thin film and Ba0 5Sr0 5TiO3 (BST55) thin film is shown. Unfortunately, no good ferroelectric loop is observed in the experiment.