Study On The Preparation And Properties Of The Porous Low-k MSQ Thin Films

Since the first integrated circuit was invented, the Si-based microelectronic technology has been developing very quickly. As feature sizes in integrated circuits approach 0.18μm , problems with interconnect resistance-capacitance (RC) delay, power consumption, and crosstalk become more urgent. To mitigate these problems, low dielectric constant materials for use as interlayer dielectrics are required.In this paper, the porous low k MSQ thin films were prepared by usingβ-cyclodextrin nanoparticles as a porogen and methyl sisesquioxane (MSQ) as a matrix. We systematically and comparatively studied the properties of the film, such as preparation, microstructure, chemical bond state, and electrical and mechanical properties. Through sol-gel method with spin-on technology, we deposited porous MSQ thin film with small aperture and solid matrix. The results of SEM indicate that the pore size is 10nm, and the thickness of the film are uniformity, the surface of MSQ film are smooth.The electrical and mechanical properties of the MSQ thin films are analyzed by variable-angle spectroscopic ellipsometry and nano-indentation techniques. The results of the test shows that porous MSQ films have good properties, the dielectric constant is less than 1.7, The mechanical properties are the best by adding 30%β-cyclodextrin in precursors.