Simulation Of Anisotropic Etching For Micro Structure Of Crystal Silicon Based On CA Model

A three-dimension dynamic simulating system for silicon anisotropic etching process has been set up based on the 3-D continuous CA model and VC developing environment in this paper. The dynamic Graphic Display of etching process was carried out by OpenGL technique. This system has simulated the anisotropic and microcosmic etching process of silicon.The two simulating systems for silicon anisotropic etching process have been set up based on the combined of static and dynamic storage. The dynamic storage has been selected to store the information of atoms based on the special structure of crystalline silicon. The unit sell of silicon was the smallest deal with unit. The two- dimensional was dynamic distributed to storage the information of atom, which measure was decided according to the measure of silicon model which was input by user. The etching process is referred to as the removal of atoms. The atom was classified according to the counts of the neighbor atoms and the next neighbor atoms. The atom's life was reduced by the velocity of some wafer which input by user. If the atom's life was zero, the atom was removed from this position. Because of the combined of static and dynamic storage structure, the speed of the simulation is improved, so that the PC can carry out this etching simulation.The convex corner undercutting on Si (100) was discussed using this simulation software. Three compensation means were designed to get well right angle structure which was inosculated to the experiment. The five angles and rotundity were also discussed in this paper. There is some reference to the compensation of any shape mask.