The Morphological Evolution And Concrescence Mechanism For A Damnification In Thin-film Interconnect Of Integrated Circuit Analyzed By Phase -field Method

A typical failure mode of the thin-film interconnect in integrated circuit is that voids nucleate, grow and change their shape to form crack-like slits oriented perpendicular to the line, which cause an open circuit.Phase-field method can be used to describe the complicated morphologies of voids growth without explicitly tracking the complex phase boundaries.It is expected as a powerful tool to describe complex phase transitions in non-equilibrium state.In this thesis, the governing equations which simulate morphological evolution of a void in interconnect are firstly developed based on sharp interface method and phase-field method,and then we get dimensionless parameters equation. The narrow interface method is put forward to optimize the numerical computation of the phase-field model.In the example calculation, the numerical simulation of the initial damage defect configuration was circular void in the electric field. The void drift velocity compared with the existing literature and the theoretical solution get a good match, which proved that this phase-field model given by numerical solution have reliability and validity.We use the established model to simulate the void morphological evolution under the surface energy, electric field and stress field. Then we make the analysis of the accuracy and applicability of the results of numerical simulation .The impact of the diffusion anisotropy is to be considered. From this simulation we study the major role of diffusion anisotropy on the configuration of the evolution. Also we change the initial configuration for numerical analysis of micro-crack shape to study the evolution of the crack appears in the form of various types of morphology evolution.Finally,considering the various field conditions on the void morphology evolution of the physical influence in different void configurations, we predicte void shape evolution trend to explore the feasibility of the mechanism of crack healing. So interconnect wires could design to provide a meaningful reliability of the theoretical basis and practical engineering application reference value.